AON1611 20v p-channel mosfet v ds i d (at v gs =-4.5v) -4a r ds(on) (at v gs =-4.5v) < 58m w r ds(on) (at v gs =-2.5v) < 76m w r ds(on) (at v gs =-1.8v) < 98m w r ds(on) (at v gs =-1.5v) < 120m w symbol the AON1611 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -20v s g d symbol v ds v gs i dm t j , t stg symbol t 10s steady-state c/w maximum junction-to-ambient a d 110 c thermal characteristics units maximum junction-to-ambient a c/w r q ja 56 88 70 parameter typ max w v maximum units parameter drain-source voltage -20 t a =25c v -4 -3 t a =25c t a =70c 8 gate-source voltage a continuous drain current g i d t a =70c 1.15 1.8 junction and storage temperature range -16 pulsed drain current c -55 to 150 power dissipation a p d general description features www.freescale.net.cn 1 / 5
symbol min typ max units bv dss -20 v v ds =-20v, v gs =0v -1 t j =55c -5 i gss 10 m a v gs(th) gate threshold voltage -0.3 -0.6 -0.9 v i d(on) -16 a 46 58 t j =125c 64.5 80 58 76 m w 74 98 m w 88 120 m w g fs 15 s v sd -0.66 -1 v i s -2.5 a c iss 550 pf c oss 93 pf c rss 64 pf r g 12 w q g (4.5v) 7 10 nc q gs 1 nc q gd 1.8 nc t 15 ns electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage r ds(on) static drain-source on-resistance i dss reverse transfer capacitance v gs =0v, v ds =-10v, f=1mhz switching parameters m w on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-4.5v, i d =-4a m a v ds =v gs , i d =-250 m a v ds =0v, v gs =8v gate resistance v gs =0v, v ds =0v, f=1mhz v gs =-4.5v, v ds =-10v, i d =-4a zero gate voltage drain current gate-body leakage current v ds =-5v, i d =-4a v gs =-1.5v, i d =-1a forward transconductance v gs =-2.5v, i d =-3a v gs =-1.8v, i d =-2a i s =-1a,v gs =0v gate source charge gate drain charge total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters diode forward voltage t d(on) 15 ns t r 33 ns t d(off) 50 ns t f 43 ns t rr 16 ns q rr 6.5 nc body diode reverse recovery time i f =-4a, di/dt=100a/ m s turn-off fall time body diode reverse recovery charge i f =-4a, di/dt=100a/ m s turn-off delaytime turn-on rise time turn-on delaytime v gs =-4.5v, v ds =-10v, r l =2.5 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja t 10s value and the maximum allowed junction temperat ure of 150 c. the value in any given application depends on the user's specific board de sign. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. AON1611 20v p-channel mosfet www.freescale.net.cn 2 / 5
typical electrical and thermal characteristics 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 0 20 40 60 80 100 120 0 2 4 6 8 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) v gs =-1.5v 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-1.8v i d =-2a v gs =-4.5v i d =-4a v gs =-2.5v i d =-3a v gs =-1.5v i d =-1a 25 c 125 c v ds =-5v v gs =-2.5v v gs =-4.5v 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-1.0v -1.5v -4.5v -2.5v -1.8v v gs =-1.8v 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 40 60 80 100 120 140 0 1 2 3 4 5 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-4a 25 c 125 c AON1611 20v p-channel mosfet www.freescale.net.cn 3 / 5
typical electrical and thermal characteristics 0 1 2 3 4 5 0 2 4 6 8 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 0 5 10 15 20 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note h) c oss c rss v ds =-10v i d =-4a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 100ms 1s ambient (note h) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse operating area (note f) r q ja =110 c/w AON1611 20v p-channel mosfet www.freescale.net.cn 4 / 5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i AON1611 20v p-channel mosfet www.freescale.net.cn 5 / 5
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